Changchun New Industries Optoelectronics Technology Co., Ltd.

Multimode Laser Diode

 

808nm Multimode Laser Diode

 
Laser diode provided by CNI at 808 nm in C-mount package provide state-of-the-art power and brightness. The multimode laser diode, small emitting aperture, combined with low beam divergence, make these devices the highest-brightness family of CW diode lasers available in the industry.

Standard Product Specifications for 808nm Diodes

Item

Symbol

MLD-808-500-C MLD-808-1000-C

MLD-808-2000-C

MLD-808-2500-C

MLD-808-5000-C MLD-808-10000-C

Units

CW Output Power 

P

500

1000

2000

2500

5000

1000

mW

Peak Wavelength 

λp

808±4

808±4

808±4

808±3

808±3

808±4

nm

Threshold Current 

Ith

≤0.15

≤0.36

≤0.65

≤0.5

0.75

1.2

A

Operating Current 

Iop

0.65

1.3

≤2.45

≤2.7

5.2

≤11

A

Slope Efficiency 

η

≥1.0

≥1.0

≥1.2

≥1.2

1.1

≥1.1

W/A

Operating Voltage 

Vop

≤2.2

≤2.2

≤2.2

≤2.2

2.0

≤2.2

V

Horizontal Beam Divergence

θ

≤8

≤8

≤8

≤8

≤10

≤10

deg

Vertical Beam Divergence

θ

≤36

≤36

≤36

≤36

≤36

≤38

deg

Wavelength Temperature Coefficient

 

0.25

0.25

0.25

0.25

0.28

0.25

nm/

Polarization 

 

TE

TE

TE

TE

TM

TE

 

Storage Temperature 

Tstg

-10~80

-10~80

-10~80

-10~80

-10~80

-10~60

Operating Temperature 

Tc

20~30

20~30

0~30

-20~30

-20~30 -20~30

 
 

Addr: No.888 Jinhu Road High-tech Zone,Changchun 130103, P.R.China

Tel:+86-431-85603799     Fax:+86-431-87020258     E-mail: sales@cnilaser.com

 
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