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Laser Diode |
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Laser Diode
at 808nm |
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Features
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Wavelength: 808nm
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Output
power:200, 500mW, CW
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Can Type:
TO-18 (ø5.6mm), TO-5 (ø9mm)
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Applications
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◆Near-infrared
laser diode at 808nm with TO package |
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Electrical and
optical characteristics (Tc=25℃) |
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Part
Number |
LD-808-0.2 |
LD-808-0.5 |
Unit |
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Peak Wavelength |
808 |
808 |
nm |
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CW Output Power |
0.2 |
0.5 |
W |
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Package |
TO-18 (ø5.6mm) |
TO-5 (ø9mm) |
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Spectral Width (FWHM) |
0.5 |
0.5 |
nm |
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Slope
Efficiency |
0.95 |
0.9 |
W/A |
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Polarization |
TE |
TE |
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Vertical Beam Divergence |
38 |
40 |
deg |
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Horizontal
Beam Divergence |
8 |
12 |
deg |
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Wavelength
Temperature Coefficient |
0.2 |
0.3 |
nm/℃ |
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Threshold
Current |
0.06 |
0.15 |
A |
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Operating Current |
0.28 |
0.65 |
A |
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Operating Voltage |
2.20 |
2.00 |
V |
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Storage
Temperature |
-40~80 |
℃ |
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Operating
Temperature |
20~35 |
℃ |
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Features
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Applications
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◆Near-infrared
laser diode at 808nm with C-mount package |
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Specifications |
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Part
Number |
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LD-808-0.5 |
LD-808-2.0 |
LD-808-2.5 |
LD-808-5.0 |
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Peak Wavelength |
nm |
808±10
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808±3 |
808±3
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808±3
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CW Output Power |
W |
0.5 |
2.0 |
2.5 |
5.0 |
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Emitting
Area |
µm |
50 |
100 |
150 |
200 |
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Spectral
Width (FWHM) |
nm |
≤2.5 |
≤3 |
≤3 |
≤3 |
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Slope
Efficiency |
W/A |
≥1.0 |
≥1.2 |
≥1.1 |
≥1.1 |
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Polarization |
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TE |
TE |
TM |
TM |
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Vertical Beam Divergence |
deg |
40 |
36 |
36 |
36 |
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Horizontal
Beam Divergence |
deg |
10 |
8 |
10 |
10 |
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Wavelength
Temperature Coefficient |
nm/℃ |
0.3 |
0.25 |
0.28 |
0.28 |
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Threshold
Current |
A |
0.13 |
0.65 |
0.45 |
0.65 |
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Operating Current |
A |
0.6 |
2.45 |
2.5 |
5.0 |
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Operating Voltage |
V |
2.0 |
2.2 |
1.85 |
1.85 |
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Series Resistance |
Ω |
0.60 |
0.15 |
0.12 |
0.12 |
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Operating
Temperature |
℃ |
10～40 |
-20-30 |
-20-30 |
-20-30 |
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Storage
Temperature |
℃ |
-10～60 |
-20-80 |
-20-80 |
-20-80 |
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Addr: No.888 Jinhu Road High-tech Zone,Changchun 130103, P.R.China |
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Tel:+86-431-85603799 Fax:+86-431-87020258
E-mail:
sales@cnilaser.com |
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